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BUZ51-E3045 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
BUZ51-E3045
Infineon
Infineon Technologies Infineon
BUZ51-E3045 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BUZ 51
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 3.4 A, VDD = 50 V
RGS = 25 , L = 67 mH
450
mJ
EAS 350
300
250
200
150
100
50
0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 5 A
16
V
VGS
12
10
0,2
V
DS
max
0,8
V
DS
max
8
6
4
2
0
0 20 40 60 80 100 120 140 160 nC 190
QGate
1200
V
1160
V(BR)DS1S140
1120
1100
1080
1060
1040
1020
1000
980
960
940
920
900
-60
-20
20
60
100 °C 160
Tj
Semiconductor Group
8
07/96
 

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