TD351I View Datasheet(PDF) - STMicroelectronics

Part Name

Description

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TD351I

Advanced IGBT/MOSFET driver

STMicroelectronics 

Electrical characteristics

4

Electrical characteristics

TD351

TA = -20 to 125°C, VH = 16 V, unless otherwise specified.

Table 5. Electrical characteristics

Symbol

Parameter

Test condition

Min Typ Max Unit

Input

Vton

IN turn-on threshold voltage

Vtoff

IN turn-off threshold voltage

tonmin Minimum pulse width

Iinp

IN input current

Voltage reference (1)

0.8

1.0

V

4.0

4.2

V

100

135

220

ns

IN input voltage < 4.5V

1

µA

Vref

Iref

Clamp

Voltage reference

Maximum output current

T = 25°C

4.85 5.00 5.15

V

10

mA

Vtclamp

VCL

Delay

CLAMP pin voltage threshold

Clamp low voltage

Icsink = 500mA

2.0

V

2.5

V

Vtdel

Rdel

Off Level

Voltage threshold

Discharge resistor

I=1mA

2.5

V

500

Iblvoff

Violv

Output

LVOFF peak input current (sink)

Offset voltage

LVOFF = 12V

LVOFF = 12V

90

200

µA

-0.3 -0.15

0

V

Isink

Isrc

VOL1

VOL2

VOH1

VOH2

tr

tf

Output sink current

Output source current

Output low voltage 1

Output low voltage 2

Output high voltage 1

Output high voltage 2

Rise time

Fall time (2)

tdon

Turn on propagation delay

tdoff

Turn off propagation delay (2)

Vout = 6V

1000 1700

mA

Vout = VH-6V

750 1300

mA

Iosink = 20mA

0.35

V

Iosink = 500mA

2.5

V

Iosource = 20mA

VH-2.5

V

Iosource = 500mA

VH-4.0

V

CL = 1nF, 10% to 90%

100

ns

CL = 1nF, 90% to 10%

100

ns

10% OUT change:

Rd = 4.7kΩ, no Cd

600

ns

Rd = 10kΩ, Cd = 220 pF

1.8

2.0

2.2

µs

10% OUT change

550

ns

6/19

Doc ID 10977 Rev 2

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