KTD1415V View Datasheet(PDF) - KEC
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| KTD1415V Datasheet PDF : 0 Pages | |||
SEMICONDUCTOR
TECHNICAL DATA
KTD1415V
EPITAXIAL PLANAR NPN TRANSISTOR
INDUSTRIAL USE.
HIGH POWER SWITCHING APPLICATIONS.
HAMMER DRIVER, PULSE MOTOR DRIVER
APPLICATIONS.
FEATURES
High DC Current Gain : hFE=2000(Min.) at VCE=3V, IC=3A.
Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
RATING
100
100
5
7
0.2
30
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
L
L
M
D
D
NN
C
DIM MILLIMETERS
A
10.0+_ 0.3
B
15.0+_ 0.3
C
2.70 +_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_ 0.2
F
3.0+_ 0.3
G
12.0+_ 0.3
H
0.5+0.1/-0.05
J
13.6 +_ 0.5
R
K
3.7+_ 0.2
L
1.2+0.25/-0.1
M
1.5+0.25/-0.1
N
2.54 +_ 0.1
P
6.8+_ 0.1
Q
4.5 +_ 0.2
R
2.6 +_0.2
H
S
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
EQUIVALENT CIRCUIT
BASE
=~ 5KΩ
=~ 150Ω
COLLECTOR
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
ICBO
IEBO
V(BR)CEO
hFE(1)
hFE(2)
VCE(sat)(1)
VCE(sat)(2)
VBE(sat)
Turn-on Time
ton
Switching
Storage Time
tstg
Time
Fall Time
tf
TEST CONDITION
VCB=100V, IE=0
VEB=5V, IC=0
IC=50mA, IB=0
VCE=3V, IC=3A
VCE=3V, IC=7A
IC=3A, IB=6mA
IC=7A, IB=14mA
IC=3A, IB=6mA
20µS INPUT I B1
IB1
I B2
IB2
I B1 =-I B2 =6mA
DUTY CYCLE 1%
OUTPUT
15Ω
VCC =45V
MIN.
-
-
100
2000
1000
-
-
-
TYP. MAX. UNIT
-
100
A
-
3.0 mA
-
-
V
- 15000
-
-
0.9 1.5
V
1.2 2.0
1.5 2.5
V
-
0.8
-
-
3.0
-
S
-
2.5
-
2007. 5. 22
Revision No : 1
1/3
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