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K1215D Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1215D Silicon N-Channel MOS FET Hitachi
Hitachi -> Renesas Electronics Hitachi
K1215D Datasheet PDF : 4 Pages
1 2 3 4
2SK1215
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Gate current
Channel power dissipation
Channel temperature
Storage temperature
Note: 1. VGS = –4 V
Symbol
VDSX*1
VGSS
ID
IG
Pch
Tch
Tstg
Ratings
Unit
20
V
±5
V
30
mA
±1
mA
100
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSX
20
Gate cutoff current
I GSS
Drain current
I
*1
DSS
4
Gate to source cutoff voltage VGS(off)
0
Forward transfer admittance |yfs|
8
Input capacitance
Ciss
Output capacitance
Coss —
Reverse transfer capacitance Crss
Power gain
PG
24
Typ
14
2.5
1.6
0.03
Noise figure
NF
Note: 1. The 2SK1215 is grouped by IDSS as follows.
Grade
D
E
F
Mark
IGD
IGE
IGF
I DSS
4 to 8
6 to 10
8 to 12
Max
±20
12
–2.0
3
Unit
V
nA
mA
V
mS
pF
pF
pF
dB
dB
Test conditions
ID = 100 µA, VGS = –4 V
VGS = ±5 V, VDS = 0
VDS = 10 V, VGS = 0
VDS = 10 V, ID = 10 µA
VDS = 10 V, VGS = 0, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, VGS = 0,
f = 100 MHz
See characteristic curves of 2SK359.
2
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