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IRFW820B View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
IRFW820B 500V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
IRFW820B Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
100 Bottom : 5.0 V
10-1
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
10
8
VGS = 10V
6
V = 20V
GS
4
2
Note : TJ = 25
0
0
2
4
6
8
10
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1000
800
600
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
C
iss
400
C
oss
Notes :
200
C
rss
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
100
10-1
2
150oC
25oC
-55oC
Notes :
1.
2.
V25DS0μ=
40V
s Pulse
Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10-1
0.2
150
25
Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 100V
DS
10
VDS = 250V
8
VDS = 400V
6
4
2
Note : ID = 2.5 A
0
0
3
6
9
12
15
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, November 2001
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