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KDV269E Просмотр технического описания (PDF) - KEC

Номер в каталогеКомпоненты Описаниепроизводитель
KDV269E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE KEC
KEC KEC
KDV269E Datasheet PDF : 2 Pages
1 2
SEMICONDUCTOR
TECHNICAL DATA
CATV TUNING.
FEATURES
High Capacitance Ratio : C2V/C25V=11.5(Typ.)
Low Series Resistance : rS=0.55(Typ.)
Excellent C-V Characteristics, and Small Tracking Error.
Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Peak Reverse Voltage
VRM
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
34
36 (RL=10k)
125
-55125
UNIT
V
V
KDV269E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Reverse Current
IR
Capacitance
C2V
Capacitance
C25V
Capacitance Ratio
C2V/C25V
C25V/C28V
Series Resistance
rS
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
C(Min.)
0.02
(VR=2~25V)
TEST CONDITION
IR=1A
VR=28V
VR=2V, f=1MHz
VR=25V, f=1MHz
VR=5V, f=470MHz
MIN.
34
-
29
2.5
11.0
1.03
-
Marking
TYP.
-
-
31.5
2.75
11.5
1.05
0.55
MAX.
-
10
34
2.9
-
-
0.7
UNIT
V
nA
pF
pF
-
Type Name
UR
2000. 3. 24
Revision No : 0
1/2
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