KDV269 View Datasheet(PDF) - KEC
Part Name
Description
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| KDV269 Datasheet PDF : 0 Pages | |||
SEMICONDUCTOR
TECHNICAL DATA
CATV TUNING.
FEATURES
ᴌHigh Capacitance Ratio : C2V/C25V=11.5(Typ.)
ᴌLow Series Resistance : rS=0.55ή(Typ.)
ᴌExcellent C-V Characteristics, and Small Tracking Error.
ᴌUseful for Small Size Tuner.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Peak Reverse Voltage
VRM
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
34
36 (RL=10kή)
125
-55ᴕ125
UNIT
V
V
ᴱ
ᴱ
KDV269
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
B
G
1
H
2
D
M
M
1. ANODE
2. CATHODE
J
C
I
DIM MILLIMETERS
A
2.50 +_ 0.1
B
1.25+_ 0.05
C
0.90 +_0.05
D 0.30+0.06/-0.04
E
1.70 +_ 0.05
F
MIN 0.17
G
0.126 +_ 0.03
H
0~0.1
I
1.0 MAX
J
0.15 +_0.05
K
0.4 +_0.05
L
2 +4/-2
M
4~6
USC
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Reverse Current
IR
Capacitance
C2V
Capacitance
C25V
Capacitance Ratio
C2V/C25V
C25V/C28V
Series Resistance
rS
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
C(Min.)
⏊0.02
(VR=2~25V)
TEST CONDITION
IR=1ỌA
VR=28V
VR=2V, f=1MHz
VR=25V, f=1MHz
VR=5V, f=470MHz
MIN.
34
-
29
2.5
11.0
1.03
-
Marking
TYP.
-
-
31.5
2.75
11.5
1.05
0.55
MAX.
-
10
34
2.9
-
-
0.7
UNIT
V
nA
pF
pF
-
ή
Type Name
UR
2001. 6. 11
Revision No : 2
1/2
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