BTA06T-600CWRG View Datasheet(PDF) - STMicroelectronics
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Description
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BTA06T-600CWRG Datasheet PDF : 8 Pages
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Characteristics
1
Characteristics
BTA06T-600CWRG
Table 1. Absolute maximum ratings (limiting values)
Symbol
Parameter
Value
IT(RMS)
ITSM
I²t
dI/dt
On-state rms current (full sine wave)
Non repetitive surge peak on-state current (full
cycle sine wave, Tj initial = 25 °C)
I²t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100 ns
VDSM/VRSM Non repetitive surge peak off-state voiltage
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
F = 60 Hz
F = 50 Hz
tp = 10 ms
F = 120 Hz
tp = 10 ms
tp = 20 µs
Tc = 100 °C
t = 16.7 ms
t = 20 ms
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
6
47
45
13
50
VDRM/VRRM
+ 100
4
1
-40 to +150
-40 to +125
Unit
A
A
A²s
A/µs
V
A
W
°C
Table 2.
Symbol
Electrical characteristics, Snubberless (3 quadrants)
(Tj = 25 °C, unless otherwise specified)
Test conditions
Quadrant
IGT(1)
VGT
VGD
IH (2)
VD = 12 V RL = 30 Ω
VD = 12 V RL = 30 Ω
VD = VDRM RL = 3.3 kΩ
IT = 100 mA
IL
IG = 1.2 x IGT
dV/dt (2) VD = 67% VDRM, gate open, Tj = 125 °C
(dI/dt)c (2) Without snubber, Tj = 125 °C
I - II - III
I - II - III
I - II - III
I - III
II
1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of A2 pin referenced to A1 pin
MAX
MAX
MIN
MAX
MAX
MIN
MIN
Value
35
1.3
0.2
35
50
80
750
8.0
Unit
mA
V
V
mA
mA
V/µs
A/ms
Table 3. Static electrical characteristics
Symbol
Test conditions
VTM(1)
VTO(1)
RD(1)
ITM = 8.5 A, tp = 380 µs
Threshold voltage
Dynamic resistance
IDRM
IRRM
VDRM = VRRM
1. For both polarities of A2 pin referenced to A1 pin
Value
Unit
Tj = 25 °C
MAX
1.6
V
Tj = 125 °C MAX
0.85
V
Tj = 125 °C MAX
80
mΩ
Tj = 25 °C
5
µA
MAX
Tj = 125 °C
1
mA
2/8
Doc ID 17641 Rev 2
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