2PD601ARW View Datasheet(PDF) - Galaxy Semi-Conductor
Part Name
Description
View to exact match
| 2PD601ARW Datasheet PDF : 0 Pages | |||
BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
Production specification
2PD601AW
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
60
V
Collector-emitter breakdown
voltage
V(BR)CEO
IC=1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
6
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.01 μA
Emitter cut-off current
DC current gain
IEBO
VEB=5V,IC=0
VCE=10V,IC=2mA
2PD601AQW 160
2PD601ARW 210
hFE
2PD601ASW 290
VCE=2V,IC=100mA
90
0.01 μA
260
340
460
Collector-emitter saturation voltage VCE(sat)
Transition frequency
fT
IC=100mA, IB= 10mA
VCE=6V, IC= 2mA
f=100MHz 2PD601AQW 100
2PD601ARW 120
2PD601ASW 140
0.5 V
MHz
Document number: BL/SSSTF028
Rev.A
www.galaxycn.com
2
|
|
Share Link: 