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KDV214E Просмотр технического описания (PDF) - KEC

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KDV214E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE KEC
KEC KEC
KDV214E Datasheet PDF : 2 Pages
1 2
SEMICONDUCTOR
TECHNICAL DATA
TV TUNING.
FEATURES
High Capacitance Ratio : C2V/C25V=6.3(Typ.)
Low Series Resistance : rS=0.57 (Max.)
Excellent C-V Characteristics, and Small Tracking Error.
Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
32
125
-55 125
UNIT
V
KDV214E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current
IR
Capacitance
C2V
Capacitance
C25V
Capacitance Ratio
C2V/C25V
Series Resistance
rS
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
C(Min.)
0.02
(VR=2~25V)
TEST CONDITION
VR=28V
VR=2V, f=1MHz
VR=25V, f=1MHz
VR=5V, f=470MHz
MIN.
-
14.15
2.06
6.3
-
TYP.
-
-
-
-
-
MAX.
10
15.75
2.35
-
0.57
UNIT
nA
pF
pF
-
Marking
Type Name
UO
2003. 12. 2
Revision No : 3
1/2
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