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KDV214 Просмотр технического описания (PDF) - KEC

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KDV214 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE KEC
KEC KEC
KDV214 Datasheet PDF : 2 Pages
1 2
SEMICONDUCTOR
TECHNICAL DATA
TV TUNING.
FEATURES
·High Capacitance Ratio : C2V/C25V=6.5(Typ.)
·Low Series Resistance : rS=0.4(Typ.)
·Excellent C-V Characteristics, and Small Tracking Error.
·Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Peak Reverse Voltage
VRM
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
30
35 (RL=10k)
125
-55125
UNIT
V
V
KDV214
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
B
G
1
H
2
D
M
M
1. ANODE
2. CATHODE
J
C
I
DIM MILLIMETERS
A
2.50 +_ 0.1
B
1.25+_ 0.05
C
0.90 +_0.05
D 0.30+0.06/-0.04
E
1.70 +_ 0.05
F
MIN 0.17
G
0.126 +_ 0.03
H
0~0.1
I
1.0 MAX
J
0.15 +_0.05
K
0.4 +_0.05
L
2 +4/-2
M
4~6
USC
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Reverse Current
IR
Capacitance
C2V
Capacitance
C25V
Capacitance Ratio
C2V/C25V
Series Resistance
rS
Note : Available in matched group for capacitance to 2.5%.
C(Max.)-C(Min.)
C(Min.) 0.025
(VR=2~25V)
TEST CONDITION
IR=1μA
VR=28V
VR=2V, f=1MHz
VR=25V, f=1MHz
VR=5V, f=470MHz
MIN.
30
-
14.16
2.11
5.90
-
Marking
TYP.
-
-
-
-
6.50
0.4
MAX.
-
10
16.25
2.43
7.15
0.55
UNIT
V
nA
pF
pF
-
Type Name
UO
2002. 6. 14
Revision No : 2
1/2
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