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P-TO263-15-1 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
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P-TO263-15-1
Infineon
Infineon Technologies Infineon
P-TO263-15-1 Datasheet PDF : 18 Pages
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BTS 780 GP
2
Circuit Description
2.1 Input Circuit
The control inputs GH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with
hysteresis. Buffer amplifiers are driven by these stages and convert the logic signal into
the form necessary for driving the power output stages. The inputs are protected by ESD
clamp-diodes.
The inputs GL1 and GL2 are connected to a standard N-channel logic level power-MOS
gate.
2.2 Output Stages
The output stages consist of an ultra low RDS ON Power-MOS H-Bridge. Protective
circuits make the outputs short-circuit proof to ground and load short-circuit proof. In H-
bridge configuration, the D-MOS body-diodes can be used for freewheeling when
commutating inductive loads. If the high-side switches are used as single switches,
positive and negative voltage spikes which occur when driving inductive loads are limited
by integrated power clamp diodes (c.f. BTS 734L1 datasheet for a detailed description).
2.3 Short-Circuit Protection (valid only for the high-side switches)
The outputs are protected against
– output short circuit to ground, and
– overload (load short circuit).
An internal OP-Amp controls the Drain-Source-Voltage of the HS-Switches by
comparing the DS-Voltage-drop with an internal reference voltage. Above this trippoint
the OP-Amp reduces the output current depending on the junction temperature and the
drop voltage.
In the case of an overloaded high-side switch the corresponding status output is set to
low.
If the HS-Switches are in OFF-state-Condition internal resistors RO1,2 from SH1,2 to
GND pull the voltage at SH1,2 to low values. On each output pin SH1 and SH2 an output
examiner circuit compares the output voltages with the internal reference voltage VEO.
This results in switching the corresponding status output to low if the source voltage in
OFF-Condition is higher then VEO. In H-Bridge condition this feature can be used to
protect the low-side switches against short circuit to VS during the OFF-period.
2.4 Overtemperature Protection (valid only for the high-side-switches)
The chip also incorporates an overtemperature protection circuit with hysteresis which
switches off the output transistors and sets the status output to low.
Data Sheet
6
1999-06-22
 

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