P-TO263-15-1 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

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P-TO263-15-1

TrilithIC

Infineon Technologies 

BTS 780 GP

The high-side switches are produced in the SMART SIPMOS® technology. They are fully

protected and contain the signal conditioning circuitry for diagnosis (the comparable

standard high-side product is the BTS 734L1).

For minimized RDS ON the two low-side switches are produced in S-FET logic level

technology (the comparable standard product is the BUZ 100SL).

Each drain of these three chips is mounted on separated leadframes (see Figure 1). The

sources of all four power transistors are connected to separate pins.

So the BTS 780 GP can be used in H-Bridge configuration as well as in any other switch

configuration.

Moreover, it is possible to add current sense resistors.

All these features open a broad range of automotive and industrial applications.

Data Sheet

2

1999-06-22

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