BDW94 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
View to exact match
BDW94 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BDW94/A/B/C
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDW94
-45
BDW94A
-60
VCEO(SUS)
Collector-emitter
sustaining voltage
IC=-0.1A, IB=0
V
BDW94B
-80
BDW94C
-100
VCEsat-1 Collector-emitter saturation voltage IC=-5A ,IB=-20mA
-2.0
V
VCEsat-2 Collector-emitter saturation voltage IC=-10A ,IB=-0.1A
-3.0
V
VBEsat-1 Base-emitter saturation voltage
IC=-5A ,IB=-20mA
-2.5
V
VBEsat-2 Base-emitter saturation voltage
IC=-10A ,IB=-0.1A
-4.0
V
BDW94
VCB=-45V, IE=0
体 ICBO
Collector
cut-off current
固I电NC半H导ANGE SEMICONDUCTOR ICEO
Collector
cut-off current
BDW94A VCB=-60V, IE=0
BDW94B VCB=-80V, IE=0
BDW94C VCB=-100V, IE=0
BDW94
VCE=-45V, IB=0
BDW94A VCE=-60V, IB=0
BDW94B VCE=-80V, IB=0
-0.1 mA
-1.0 mA
BDW94C VCE=-100V, IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-2.0 mA
hFE-1
DC current gain
IC=-3A ; VCE=-3V
1000
hFE-2
DC current gain
IC=-5A ; VCE=-3V
750
20000
hFE-3
DC current gain
IC=-10A ; VCE=-3V
100
VF-1
Forward diode voltage
IF=-5A
-2.0
V
VF-2
Forward diode voltage
IF=-10A
-4.0
V
2
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