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KTA968AY View Datasheet(PDF) - TY Semiconductor

Part Name
Description
View to exact match
KTA968AY Datasheet PDF : 0 Pages
Product specification
TO-220-3L Plastic-Encapsulate Transistors
KTA968A TRANSISTOR (PNP)
FEATURES
z High Transition Frequency
z High Voltage Applications
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-180
-180
-5
-1.5
2
63
150
-55~+150
Unit
V
V
V
A
W
/W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC=-100µA,IE=0
-180
V
V(BR)CEO IC=-10mA,IB=0
-180
V
V(BR)EBO IE=-1mA,IC=0
-5
V
ICBO
VCB=-160V,IE=0
-1
μA
IEBO
VEB=-5V,IC=0
-1
μA
hFE
VCE=-5V, IC=-100mA
70
240
VCE(sat) IC=-500mA,IB=-50mA
-1.5
V
VBE
VCE=-5V, IC=-500mA
-1
V
Cob
VCB=-10V,IE=0, f=1MHz
30
pF
fT
VCE=-10V,IC=-100mA
100
MHz
CLASSIFICATION OF hFE
RANK
RANGE
O
70-140
Y
120-240
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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