TIP105 View Datasheet(PDF) - Power Innovations
Part Name
Description
View to exact match
TIP105 Datasheet PDF : 6 Pages
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TIP105, TIP106, TIP107
PNP SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
IEBO
hFE
VCE(sat)
VBE
VEC
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
IC = -30 mA
(see Note 5)
VCE = -30 V
VCE = -40 V
VCE = -50 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VEB = -5 V
VCE = -4 V
VCE = -4 V
IB = -6 mA
IB = -80 mA
VCE = -4 V
IE = -8 A
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IC = 0
IC = -3 A
IC = -8 A
IC = -3 A
IC = -8 A
IC = -8 A
IB = 0
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
-60
-80
-100
(see Notes 5 and 6)
(see Notes 5 and 6)
1000
200
(see Notes 5 and 6)
(see Notes 5 and 6)
-50
-50
-50
-50
-50
-50
-8
20000
-2
-2.5
-2.8
-3.5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
µA
µA
mA
V
V
V
thermal characteristics
RθJC
RθJA
CθC
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
Thermal capacitance of case
MIN TYP MAX UNIT
1.56 °C/W
62.5 °C/W
0.9
J/°C
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
IC = -8 A
VBE(off) = 5 V
IB(on) = -80 mA
RL = 5 Ω
IB(off) = 80 mA
tp = 20 µs, dc ≤ 2%
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
35
ns
300
ns
900
ns
1.3
µs
PRODUCT INFORMATION
2
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