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TA1100L View Datasheet(PDF) - LiteOn Technology

Part Name
Description
View to exact match
TA1100L Datasheet PDF : 4 Pages
1 2 3 4
LITE-ON
SEMICONDUCTOR
TA0640L thru TA3500L
SURFACE MOUNT
THYRISTOR SURGE PROTECTIVE DEVICE
Bi-Directional
VDRM - 58 to 320 Volts
IPP
- 30 Amperes
FEATURES
Oxide Glass Passivated Junction
Bidirectional protection in a single device
Surge capabilities up to 30A @ 10/1000us or 150A
@ 8/20us
High off state Impedance and low on state voltage
Plastic material has UL flammability classification
94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Denotes none cathode band
Weight : 0.003 ounces, 0.093 grams
SMA
SMA
A
DIM. MIN. MAX.
A
4.06 4.57
B
C
B
2.29 2.92
C
1.27 1.63
D
0.15 0.31
E
4.83 5.59
G
H
F
D
E
F
0.05 0.20
G
2.01 2.62
H
0.76 1.52
All Dimensions in millimeter
MAXIMUM RATINGS
CHARACTERISTICS
Non-repetitive peak impulse current @ 10/1000us
Non-repetitive peak On-state current @ 8.3ms (one half cycle)
Junction temperature range
storage temperature range
THERMAL RESISTANCE
SYMBOL
IPP
ITSM
TJ
TSTG
CHARACTERISTICS
Junction to leads
Junction to ambient on print circuit (on recommended pad layout)
Typical positive temperature coefficient for brekdown voltage
SYMBOL
Rth(J-L)
Rth(J-A)
VBR/TJ
MAXIMUM RATED SURGE WAVEFORM
WAVEFORM
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
IPP (A)
200
150
100
60
50
30
100
50
0
tr
VALUE
30
15
-40 to +150
-55 to +150
VALUE
30
120
0.1
UNIT
A
A
UNIT
/W
/W
%/
Peak value (Ipp)
tr= rise time to peak value
tp= Decay time to half value
Half value
tp
TIME
REV. 0, 03-Dec-2001, KSWA02
 

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