STP180N10F3 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

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STP180N10F3

N-channel 100 V, 4.0 mΩ, 120 A STripFET™ Power MOSFET D2PAK, TO-220

STMicroelectronics 

STB180N10F3

STP180N10F3

N-channel 100 V, 4.0 mΩ, 120 A STripFET™ Power MOSFET

D2PAK, TO-220

Preliminary Data

Features

Type

STB180N10F3

STP180N10F3

VDSS

100 V

100 V

1. Value limited by wire bonding

■ Ultra low on-resistance

■ 100% avalanche tested

RDS(on)

4.5 mΩ

4.8 mΩ

ID

120 A(1)

120 A(1)

Application

■ High current switching applications

Description

This n-channel enhancement mode Power

MOSFET is the latest refinement of

STMicroelectronics unique “single feature size”

strip-based process with less critical alignment

steps and therefore a remarkable manufacturing

reproducibility. The resulting transistor shows

extremely high packing density for low on

resistance, rugged avalanche characteristics and

low gate charge.

3

2

1

TO-220

3

1

D2PAK

Figure 1. Internal schematic diagram

Table 1. Device summary

Order codes

STB180N10F3

STP180N10F3

Marking

180N10F3

180N10F3

Package

D2PAK

TO-220

Packaging

Tape and reel

Tube

August 2008

Rev 1

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

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