2SA0885
Power Transistors
PC Ta
6
(1)With a 100×100×2mm
Al heat sink
(2)Without heat sink
5
4
(1)
3
2
(2)
1
0
0 20 40 60 80 100 120 140 160 180 200
Ambient temperature Ta (˚C)
IC VCE
–1.5
TC=25˚C
–1.25
–1.0
IB=–10mA
–9mA
–8mA
–7mA
–0.75
–0.5
–6mA
–5mA
–4mA
–3mA
–0.25
–2mA
–1mA
0
0
–2 –4 –6 –8 –10
Collector to emitter voltage VCE (V)
IC IB
–1.2
–1.0
VCE=–10V
TC=25˚C
–0.8
–0.6
–0.4
–0.2
0
0 –2 –4 –6 –8 –10 –12
Base current IB (mA)
VCE(sat) IC
–10
IC/IB=10
–3
–1
–0.3
TC=100˚C
25˚C
–0.1
–25˚C
–0.03
–0.01
–0.01 –0.03 –0.1 –0.3
–1
Collector current IC (A)
VBE(sat) IC
–10
IC/IB=10
–3
–1
TC=–25˚C
100˚C
–0.3
25˚C
–0.1
–0.03
–0.01
–0.01 –0.03 –0.1 –0.3
–1
Collector current IC (A)
1000
300
100
hFE IC
VCE=–10V
TC=100˚C
25˚C
–25˚C
30
10
3
1
–0.01 –0.03 –0.1 –0.3
–1
Collector current IC (A)
200
VCB=–10V
180 f=200MHz
TC=25˚C
160
fT IE
140
120
100
80
60
40
20
0
1
3
10
30
100
Emitter current IE (mA)
Cob VCB
50
IE=0
45
f=1MHz
TC=25˚C
40
35
30
25
20
15
10
5
0
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
–100
–80
VCER RBE
IC=–10mA
TC=25˚C
–60
–40
–20
0
0.1 0.3 1 3 10 30 100
Base to emitter resistance RBE (kΩ)
2