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K3348 View Datasheet(PDF) - Renesas Electronics

Part Name
Description
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K3348 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
2SK3348
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
VDSS
20
Gate to source voltage
VGSS
±10
Drain current
ID
100
Drain peak current
I Note1
D(pulse)
400
Body-drain diode reverse drain current IDR
100
Channel dissipation
Pch Note 2
300
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Note: 1. PW 10 µs, duty cycle 1%
2. Value on the alumina ceramic board (12.5x20x0.7mm)
Unit
V
V
mA
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Drain to source breakdown V(BR)DSS 20
voltage
Gate to source breakdown V(BR)GSS ±10
voltage
Gate to source leak current IGSS
Zero gate voltege drain
I DSS
current
Gate to source cutoff voltage VGS(off)
0.8
Static drain to source on state RDS(on)
1.6
resistance
RDS(on)
2.2
Forward transfer admittance |yfs|
143
220
Input capacitance
Ciss
18
Output capacitance
Coss
15
Reverse transfer capacitance Crss
5
Turn-on delay time
t d(on)
73
Rise time
tr
290
Turn-off delay time
t d(off)
360
Fall time
tf
360
Note: 3. Pulse test
4. Marking is CN
Max
±5
1
1.8
1.9
3.2
Unit
V
V
µA
µA
V
mS
pF
pF
pF
ns
ns
ns
ns
Test Conditions
ID = 100 µA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±8 V, VDS = 0
VDS = 20 V, VGS = 0
ID = 10µA, VDS = 5 V
ID = 50 mA,VGS = 4 V Note 3
ID = 50 mA,VGS = 2.5 V Note 3
ID = 50 mA, VDS = 10 V Note 3
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 50 mA, VGS = 4 V
RL = 200
 

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