3N209 View Datasheet(PDF) - New Jersey Semiconductor

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Description

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3N209

DUAL-GATE MOSFET UHF COMMUNICATIONS

New Jersey Semiconductor 

3N209

ELECTRICAL CHARACTERISTICS (continued) (TA •-- 26'C unless otherwise noted.)

Characteristic

FUNCTIONAL CHARACTERISTICS

Symbol

Mln

TYP

Max

Unit

Noise Figure

(VDS - 16 Vdc, VQ2S = 4-° Vde, ID - 10 mAdc, f = 500 MHz)

Common Source Power Gain (Figure 12)

(VDS = 16 Vdc, VQ2S = 4-°vd<;. ID = 10mAdc. f = 600 MHz)

•Bandwidth

(VDS - 16 Vdc, VQ2S = *•<> Vdc, In = 10 mAdc. f = 600 MHz)

NF

—

4.0

6.0

dB

Gps

10

13

20

dB

BW

7.0

—

17

MHz

FIGURE 1 - MOSFET CIRCUIT SCHEMATIC

TYPICAL SCATTERING PARAMETERS

FIGURE 2 -BH, INPUT REFLECTION COEFFICIENT

viruu FREQUENCY

330° 340° 360° 0 IP 20° 30°

FIGURE 3 - S,2, REVERSE TRANSMISSION COEFFICIgNT

variut FREQUENCY

30° 20° 10° 0 350° 340° 330°

320°

220°

M0»

Wft

210° 200° 190° 180° 170° 160° 110°

2!0°

150' 170° 1H° 190° 200° 210°

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