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IRFP26N60LPBF View Datasheet(PDF) - International Rectifier

Part Name
Description
View to exact match
IRFP26N60LPBF
IR
International Rectifier IR
IRFP26N60LPBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IRFP26N60LPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
IGSS
RG
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min.
600
–––
–––
3.0
–––
–––
–––
–––
–––
Typ.
–––
0.33
210
–––
–––
–––
–––
–––
0.8
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
f ––– V/°C Reference to 25°C, ID = 1mA
250 mVGS = 10V, ID = 16A
5.0
V VDS = VGS, ID = 250µA
50 µA VDS = 600V, VGS = 0V
2.0 mA VDS = 480V, VGS = 0V, TJ = 125°C
100 nA VGS = 30V
-100
VGS = -30V
––– f = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff.
Coss eff. (ER)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Effective Output Capacitance
13 ––– –––
––– ––– 180
––– ––– 61
––– ––– 85
––– 31 –––
––– 110 –––
––– 47 –––
––– 42 –––
––– 5020 –––
––– 450 –––
––– 34 –––
––– 230 –––
––– 170 –––
S VDS = 50V, ID = 16A
ID = 26A
f nC VDS = 480V
VGS = 10V, See Fig. 7 & 15
VDD = 300V
ns ID = 26A
RG = 4.3
f VGS = 10V, See Fig. 11a & 11b
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz, See Fig. 5
g VGS = 0V,VDS = 0V to 480V
(Energy Related)
Avalanche Characteristics
Symbol
EAS
IAR
EAR
d Parameter
Single Pulse Avalanche Energy
Ù Avalanche Current
™ Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
570
26
47
Max.
0.27
–––
40
Units
mJ
A
mJ
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
‚ Starting TJ = 25°C, L = 1.7mH, RG = 25,
IAS = 26A, dv/dt = 21V/ns. (See Figure 12a)
ƒ ISD 26A, di/dt 480A/µs, VDD V(BR)DSS,
TJ 150°C.
2
„ Pulse width 300µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff.(ER) is a fixed capacitance that stores the same energy
as Coss while VDS is rising from 0 to 80% VDSS.
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