K3287 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
View to exact match
K3287 Datasheet PDF : 8 Pages
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2SK3287
Silicon N Channel MOS FET
High Speed Switching
Features
• Low on-resistance
RDS = 1.26 Ω typ. (VGS = 10 V , ID = 150 mA)
RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA)
• 4 V gate drive device.
• Small package (MPAK)
Outline
MPAK
3
D
G
S
ADE-208-742 C (Z)
4th.Edition.
June 1999
1
2
1. Source
2. Gate
3. Drain
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