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K1775 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1775 Silicon N-Channel MOS FET Hitachi
Hitachi -> Renesas Electronics Hitachi
K1775 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SK1775
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max
Drain to source breakdown
V(BR)DSS
900
voltage
Gate to source breakdown
V(BR)GSS
±30
voltage
Gate to source leak current IGSS
±10
Zero gate voltage drain current IDSS
250
Gate to source cutoff voltage VGS(off)
2.0
3.0
Static drain to source on state RDS(on)
resistance
1.2
1.6
Forward transfer admittance |yfs|
3.5
5.5
Input capacitance
Ciss
Output capacitance
Coss —
Reverse transfer capacitance Crss
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body to drain diode forward VDF
voltage
Body to drain diode reverse trr
recovery time
Note 1. Pulse Test
1730 —
700 —
310 —
25
135 —
185 —
130 —
0.9
900 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 720 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A
VGS = 10 V*1
ID = 4 A
VDS = 20 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 4 A
VGS = 10 V
RL = 7.5
IF = 8 A, VGS = 0
IF = 8 A, VGS = 0,
diF / dt = 100 A / µs
See characteristic curves of 2SK1342
3
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