1PS74SB43 View Datasheet(PDF) - Philips Electronics

Part Name

Description

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1PS74SB43

Schottky barrier diode

Philips Electronics 

Philips Semiconductors

Schottky barrier diode

Product specification

1PS74SB43

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

continuous forward voltage

IR

continuous reverse current

Cd

diode capacitance

Note

1. Pulsed test: tp = 300 µs; δ = 0.02.

CONDITIONS

see Fig.2; note 1

IF = 0.1 A

IF = 1 A

VR = 10 V; note 1; see Fig.3

VR = 40 V; note 1; see Fig.3

VR = 4 V; f = 1 MHz; see Fig.4

TYP. MAX. UNIT

280 330 mV

460 500 mV

15

40

µA

60

300 µA

65

80

pF

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient note 1

Note

1. Refer to SC-74 (SOT457) standard mounting conditions.

CONDITIONS

VALUE

200

UNIT

K/W

1999 Dec 10

3

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