2SK4070
<R> PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3-a)
Mold Area
6.6 ±0.2
5.3 TYP.
4.3 MIN.
4
2.3 ±0.1
0.5 ±0.1
2) TO-251 (MP-3-b)
6.6±0.2
5.3 TYP.
4
2.3±0.1
0.5±0.1
123
1.14 MAX.
No Plating
0.76 ±0.1
2.3 TYP.
2.3 TYP.
0.5 ±0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
123
1.14 MAX.
0.76±0.12
2.3 TYP.
0.5±0.1
2.3 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
3) TO-252 (MP-3ZK)
6.5±0.2
5.1 TYP.
4.3 MIN.
4
2.3±0.1
0.5±0.1
No Plating
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
123
1.14 MAX.
2.3 2.3
No Plating
0.76±0.12
0 to 0.25
0.5±0.1
1.0
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly
dissipate it once, when it has occurred.
Data Sheet D18785EJ2V0DS
7