2SK3625
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3625
Chopper Regulator DC−DC Converter, and Motor Drive
Applications
Unit: mm
z Low drain−source ON resistance: RDS (ON) = 65 mΩ (typ.)
z High forward transfer admittance: |Yfs| = 10 S (typ.)
z Low leakage current: IDSS = 100 μA (max) (VDS = 200 V)
z Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
200
V
200
V
±30
V
25
A
100
A
100
W
488
mJ
25
A
10
mJ
150
°C
−55 to150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
1.25
°C / W
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.26 mH, RG = 25 Ω,
IAR = 25 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1
2009-09-29