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2SD1134 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
View to exact match
2SD1134
Iscsemi
Inchange Semiconductor Iscsemi
2SD1134 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1134
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; RBE=
V(BR)CBO Collector-Base Breakdown Voltage
IC= 10μA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10μA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.2A
VBE(on) Base-Emitter On Voltage
IC= 1A ; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 50V ; IE= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
hFE-2
DC Current Gain
IC= 0.1A ; VCE= 4V
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 4V
MIN TYP. MAX UNIT
60
V
70
V
5
V
1.0
V
1.0
V
1
μA
60
320
35
7
MHz
‹ hFE-1 Classifications
B
C
D
60-120 100-200 160-320
isc Websitewww.iscsemi.cn
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