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YG868C04R View Datasheet(PDF) - Fuji Electric

Part Name
Description
View to exact match
YG868C04R Datasheet PDF : 0 Pages
YG868C04R (45V / 30A)
Low IR Schottky barrier diode
[200509]
Outline drawings, mm
Features
Low IR
Low VF
Center tap connection
Applications
High frequency operation
DC-DC converters
AC adapter
Package : TO-220F
Epoxy resin UL : V-0
Connection diagram
1
2
3
Maximum ratings and characteristics
Maximum ratings
Item
Symbol
Conditions
Rating
Unit
Repetitive peak surge reverse voltage VRSM tw=500ns, duty=1/40
45
V
Repetitive peak reverse voltage
VRRM
45
V
Isolating voltage
Viso
Terminals-to-Case, AC.1min.
1500
V
Average output current
Io
Square wave, duty=1/2
Tc=105°C
30
*
A
Non-repetitive surge current
IFSM
Sine wave 10ms
160
A
non-repetitive reverse surge power dissipation PRM
tw=10µs, Tj=25°C
1000
W
Operating junction temperature
Tj
+150
°C
Storage temperature
Tstg
-40 to +150
°C
* Out put current of center tap full wave connection
Electrical characteristics (at Ta=25°C Unless otherwise specified )
Item
Forward voltage **
Reverse current **
Thermal resistance
Symbol
VF
IR
Rth(j-c)
Conditions
IF=15A
VR=40V
Junction to case
Mechanical characteristics
Mounting torque
Approximate mass
http://www.fujielectric.co.jp/fdt/scd/
Recommended torque
Max.
0.63
200
2.0
Unit
V
µA
°C/W
**Rating per element
0.3 to 0.5
N·m
2
g
 

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