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KSD986-Y View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
KSD986-Y
Fairchild
Fairchild Semiconductor Fairchild
KSD986-Y Datasheet PDF : 5 Pages
1 2 3 4 5
KSD985/986
Low Frequency Power Amplifier
• Low Speed Switching Industrial Use
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Volage
: KSD985
60
V
: KSD986
80
V
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
ICP
*Collector Current (Pulse)
IB
Base Current
PC
Collector Dissipation (Ta=25°C)
PC
Collector Dissipation (TC=25°C)
TJ
Junction Temperature
TSTG
Storage Temperature
* PW300µs, Duty Cycle10%
8.0
V
1.5
A
3.0
A
0.15
A
1.0
W
10
W
150
°C
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
ICER
Collector Cut-off Current
Collector Cut-off Current
ICEX1
ICEX2
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
hFE2
*DC Current Gain
VCE(sat)
*Collector-Emitter Saturation Voltage
VBE(sat)
*Base-Emitter Saturation Voltage
tON
Turn ON Time
tSTG
Storage Time
tF
Fall Time
* Pulse Test: PW350µs, Duty Cycle2%
VCB = 60V, IE = 0
VCE = 60V, RBE = 51
@ TC = 125°C
VCE = 60V, VBE(off) = -1.5A
VCE = 60V, VBE(off) = -1.5A
@ TC = 125°C
VEB = 5V, IC = 0
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 1A
IC = 1A, IB = 1mA
IC = 1A, IB = 1mA
VCC = 50V, IC = 1A
IB1 = - IB2 = 1mA
RL = 50
Min.
1000
2000
Typ.
0.5
1.0
1.0
Max.
10
1.0
Units
µA
mA
10
µA
1.0 mA
1.0 mA
30000
1.5
V
2.0
V
µs
µs
µs
hFE Classification
Classification
hFE2
R
2000 ~ 5000
O
4000 ~ 10000
Y
8000 ~ 30000
©2000 Fairchild Semiconductor International
Rev. A, February 2000
 

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