datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

F10NK50Z View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
F10NK50Z Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STP10NK50Z - STF10NK50Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 1 mA, VGS = 0
500
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
±10
µA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 100 µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V, ID = 4.5 A
0.55
0.7
Table 8: Dynamic
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS = 15 V, ID = 4.5 A
7
S
Ciss
Input Capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
1219
pF
Coss
Output Capacitance
159
pF
Crss
Reverse Transfer
40
pF
Capacitance
Coss eq. (3) Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 400 V
806
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 250 V, ID = 4.5 A
RG = 4.7VGS = 10 V
(see Figure 19)
19
ns
17
ns
43
ns
15
ns
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 400 V, ID = 9 A,
VGS = 10 V
(see Figure 22)
39.2
nC
7.42
nC
20.7
nC
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
9
A
36
A
VSD (1) Forward On Voltage
ISD = 9 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 9 A, di/dt = 100 A/µs
VDD = 35 V, Tj = 25°C
(see Figure 20)
268
ns
1.83
µC
13.7
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 9 A, di/dt = 100 A/µs
VDD = 35 V, Tj = 150°C
(see Figure 20)
343
ns
2.6
µC
15.15
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/12
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]