B1020 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

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B1020

Silicon PNP Darlingtion Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlingtion Power Transistor

2SB1020

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0

-100

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -7A; IB= -14mA

VBE(sat) Base-Emitter Saturation Voltage

IC= -3A; IB= -6mA

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

-1.5

V

-2.0

V

-2.5

V

-100 μA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-4.0 mA

hFE-1

DC Current Gain

IC= -3A; VCE= -3V

2000

15000

hFE-2

DC Current Gain

IC= -7A; VCE= -3V

1000

Switching Times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= -3.0A ,IB1= -IB2= -6mA,

VCC≈ -45V; RL= 15Ω

0.8

μs

2.0

μs

2.5

μs

isc website：www.iscsemi.cn

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