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BDX64C View Datasheet(PDF) - Inchange Semiconductor

Part NameDescriptionManufacturer
BDX64C Silicon PNP Darlington Power Transistor Iscsemi
Inchange Semiconductor Iscsemi
BDX64C Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX64/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX64
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDX64A
BDX64B
IC= -100mA ;IB=0
BDX64C
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB=B -20mA
VBE(on) Base-Emitter On Voltage
VECF
C-E Diode Forward Voltage
ICEO
Collector Cutoff Current
IC= -5A ; VCE= -3V
IF= -5A
VCE= 1/2VCEOmax; IB= 0
ICBO
Collector Cutoff Current
VCB= VCBOmax;IE= 0
BDX64
VCB= -40V;IE= 0;TJ= 200
BDX64A VCB= -50V;IE= 0;TJ= 200
ICBO
Collector Cutoff Current
BDX64B VCB= -60V;IE= 0;TJ= 200
BDX64C VCB= -70V;IE= 0;TJ= 200
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE-1
DC Current Gain
IC= -1A ; VCE= -3V
hFE-2
DC Current Gain
IC= -5A ; VCE= -3V
hFE-3
DC Current Gain
IC= -12A ; VCE= -3V
COB
Output Capacitance
Switching times
IE= 0 ; VCB= -10V; ftest= 1MHz
ton
Turn-on Time
toff
Turn-off Time
IC= -5A; IB1= -IB2= -20mA
MIN TYP. MAX UNIT
-60
-80
V
-100
-120
-2
V
-2.5 V
-1.8 V
-0.2 mA
-0.4 mA
-3 mA
-5 mA
1500
1000
750
200
pF
1
μs
2.5
μs
isc Websitewww.iscsemi.cn
2
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