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BDX66 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
View to exact match
BDX66
Iscsemi
Inchange Semiconductor Iscsemi
BDX66 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX66/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX66
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDX66A
BDX66B
IC= -100mA ;IB=0
BDX66C
VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA
VBE(on)
VECF
ICEO
ICBO
Base-Emitter On Voltage
C-E Diode Forward Voltage
Collector Cutoff Current
BDX66
Collector Cutoff Current
BDX66A
BDX66B
BDX66C
IC= -10A ; VCE= -3V
IF= -10A
VCE= 1/2VCEOmax; IB= 0
VCB= -40V;IE= 0;TJ= 200
VCB= -50V;IE= 0;TJ= 200
VCB= -60V;IE= 0;TJ= 200
VCB= -70V;IE= 0;TJ= 200
ICBO
Collector Cutoff Current
VCB= VCBOmax;IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE-1
DC Current Gain
IC= -1A ; VCE= -3V
hFE-2
DC Current Gain
IC= -10A ; VCE= -3V
hFE-3
DC Current Gain
IC= -16A ; VCE= -3V
COB
Output Capacitance
Switching times
IE= 0 ; VCB= -10V; ftest= 1MHz
ton
Turn-on Time
toff
Turn-off Time
IC= -10A; IB1= -IB2= -40mA
MIN TYP. MAX UNIT
-60
-80
V
-100
-120
-2
V
-2.5 V
-2
V
-1 mA
-5 mA
-1 mA
-5 mA
2000
1000
1000
300
pF
1
μs
3.5
μs
isc Websitewww.iscsemi.cn
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