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KTD3055 View Datasheet(PDF) - KEC

Part NameDescriptionManufacturer
KTD3055 TRIPLE DIFFUSED NPN TRANSISTOR KEC
KEC KEC
KTD3055 Datasheet PDF : 2 Pages
1 2
SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Complementary to KTB2955.
Recommended for 30W35W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25)
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
RATING
120
120
5
10
1.0
40
150
-55150
UNIT
V
V
V
A
A
W
KTD3055
TRIPLE DIFFUSED NPN TRANSISTOR
A
R
S
D
T
L
C
C
MM
K
123
J
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
P
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
MILLIMETERS
10.30 MAX
15.30 MAX
0.80
Φ3.60 +_ 0.20
3.00
6.70 MAX
13.60+_ 0.50
5.60 MAX
1.37 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
1.50 MAX
1.50
9.50+_ 0.20
8.00+_ 0.20
2.90 MAX
TO-220AB
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR)CEO
hFE (Note)
VCE(sat)
VBE
fT
Cob
Note : hFE Classification R:55110 , O:80160
TEST CONDITION
VCB=120V, IE=0
VEB=5V, IC=0
IC=50mA, IB=0
VCE=5V, IC=1A
IC=5A, IB=0.5A
VCE=5V, IC=5A
VCE=5V, IC=1A
VCB=10V, IE=0, f=1MHz
MIN.
-
-
120
55
-
-
-
-
TYP.
-
-
-
-
-
-
12
170
MAX.
10
10
-
160
2.5
1.5
-
-
UNIT
A
A
V
V
V
MHz
pF
1994. 5. 20
Revision No : 0
1/2
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