datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

IRFIB6N60A View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
IRFIB6N60A
Vishay
Vishay Semiconductors Vishay
IRFIB6N60A Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFIB6N60A, SiHFIB6N60A
Vishay Siliconix
2400
2000
1600
1200
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = C gd
Coss = Cds + C gd
iss
oss
800
400
rss
0
A
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
ID = 9.2A
16
12
VDS = 480V
VDS = 300V
VDS = 120V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
QG , Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
10
TJ = 150° C
1
TJ = 25° C
VGS = 0 V
0.1
0.2
0.5
0.7
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
10
100us
1ms
1
10ms
TC = 25°C
TJ = 150° C
Single Pulse
0.1
10
100
1000
VDS , Drain-to-Source Voltage (V)
10000
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91175
S09-0516-Rev. C, 13-Apr-09
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]