IRFIB6N60A View Datasheet(PDF) - Vishay Semiconductors
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Description
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IRFIB6N60A Datasheet PDF : 8 Pages
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IRFIB6N60A, SiHFIB6N60A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
65
2.1
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(on)
gfs
Ciss
Coss
Crss
Output Capacitance
Coss
Effective Output Capacitance
Coss eff.
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
td(on)
tr
td(off)
tf
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.3 Ab
VDS = 25 V, ID = 5.5 A
600
-
-
V
-
660
- mV/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
0.75
Ω
5.5
-
-
S
VGS = 0 V,
-
1400
-
VDS = 25 V,
-
180
-
f = 1.0 MHz, see fig. 5
-
7.1
-
pF
VDS = 1.0 V, f = 1.0 MHz
-
1957
-
VGS = 0 V VDS = 480 V, f = 1.0 MHz
-
49
-
VDS = 0 V to 480 Vc
-
96
-
-
-
49
VGS = 10 V
ID = 9.2 A, VDS = 400 V,
see fig. 6 and 13b
-
-
13
nC
-
-
20
VDD = 300 V, ID = 9.2 A,
RG = 9.1 Ω, RD = 35.5 Ω,
see fig. 10b
-
13
-
-
25
-
ns
-
30
-
-
22
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
5.5
A
-
-
37
Body Diode Voltage
VSD
TJ = 25 °C, IS = 9.2 A, VGS = 0 Vb
-
-
1.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
530
800
ns
TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/µsb
Qrr
-
3.0
4.4
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
d. t = 60 s, f = 60 Hz.
www.vishay.com
2
Document Number: 91175
S09-0516-Rev. C, 13-Apr-09
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