MJE13001-P
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO
400
V
Collector-Base Voltage
VCBO
600
V
Emitter Base Voltage
VEBO
7
V
Collector Current
IC
200
mA
Collector Power Dissipation
PC
750
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Base-Emitter Voltage
Collector Cutoff Cut-Off Current
Collector Emitter Cut-Off Current
Emitter Cutoff Cut-Off Current
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
Resistive Load
Storage Time
Fall Time
CLASSIFICATION OF hFE1*
RANK A
B
C
D
RANGE 10-15 15-20 20-25 25-30
SYMBOL
BVCBO
BVCEO
BVEBO
VBE
ICBO
ICEO
IEBO
TEST CONDITIONS
IC=100 μA, IE=0
IC=1mA, IB=0
IE=100 μA, IC=0
IE=100 mA
VCB=600V,IE=0A
VCE=400V, IB=0
VEB=7V, IC=0A
hFE1*
hFE2
VCE(SAT)
VBE(SAT)
VCE=20 V, IC=20mA
VCE=10V, IC=0.25mA
IC=50mA, IB=10mA
IC=50mA, IB=10mA
fT
IC=20mA,VCE=20V,f=1MHz
tS
IC=50mA, IB1=-IB2=5mA,
tF
VCC=45V
E
F
G
H
I
30-35 35-40 40-45 45-50 50-55
MIN TYP MAX UNIT
600
V
400
V
7
V
1.1 V
100 μA
200 μA
100 μA
10
70
5
0.5 V
1.2 V
8
MHz
1.5 μs
0.3 μs
J
K
L
55-60 60-65 65-70
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-088,A