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KSD1408 View Datasheet(PDF) - TY Semiconductor

Part Name
Description
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KSD1408 Datasheet PDF : 1 Pages
1
Product specification
TO-220F Plastic-Encapsulate Transistors
KSD1408 TRANSISTOR (NPN)
FEATURES
z Low Frequency Amplifier
z Medium Speed Switching
TO-220F
1.BASE
2.COLLECTOR
3.EMITTER
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
80
80
5
4
2
62.5
150
-55~+150
Unit
V
V
V
A
W
/W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO*
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
hFE(1)
hFE(2)
Collector-emitter saturation voltage
VCE(sat)
Base-emitter voltage
VBE
Transition frequency
fT
Collector output capacitance
Cob
*Pulse test: pulse width 300μs, duty cycle2.0%.
Test conditions
IC=100μA,IE=0
IC=50mA,IB=0
IE=100μA,IC=0
VCB=80V,IE=0
VEB=5V,IC=0
VCE=5V, IC=0.5A
VCE=5V, IC=3A
IC=3A,IB=0.3A
VCE=5V, IC=3A
VCE=5V,IC=0.5A
VCB=10V,IE=0, f=1MHz
Min Typ Max Unit
80
V
80
V
5
V
30
μA
100 μA
40
240
15
1.5
V
1.5
V
8
MHz
90
pF
CLASSIFICATION OF hFE(1)
RANK
R
RANGE
40-80
O
70-140
Y
120-240
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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