2SD1033 View Datasheet(PDF) - KEXIN Industrial
Part Name
Description
View to exact match
| 2SD1033 Datasheet PDF : 0 Pages | |||
SMD Type
Transistors
Silicon NPN Epitaxial Transistor
2SD1033
Features
High Voltage VCEO=150V
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
200
V
Collector to emitter voltage
VCEO
150
V
Emitter to base voltage
VEBO
5
V
Peak collector current *1
ICP
3
A
Collector current
IC
2
A
Collector power dissipation Ta = 25 *2
PT
2
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* PW 10ms,Duty Cycle 50%
*2 when mounted on ceramic substrate of 7.5cm2X0.7mm
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC Current Gain *
Collector saturation voltage *
Gain saturation Voltage
* PW 350ìs,Duty cycle 2%
Symbol
ICBO
IEBO
hFE
VCE(sat)
fT
Testconditons
VCB = 150V, IE = 0
VEB = 4V, IC = 0
VCE=10V,IC=0.4A
IC = 500mA, IB = 0.4A
VCE=10V,IE=0.4A
Min Typ Max Unit
50 ìA
50 ìA
40 100 200
0.2 1.0 V
10
MHZ
hFE Classification
Marking
hFE
M
40 to 80
L
60 to 120
K
100 to 200
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