FDN352AP-HF View Datasheet(PDF) - KEXIN Industrial
Part Name
Description
View to exact match
FDN352AP-HF Datasheet PDF : 4 Pages
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SMD Type
MOSFET
P-Channel MOSFET
FDN352AP-HF (KDN352AP-HF)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
Test Conditions
Min Typ Max Unit
VDSS ID=-250μA, VGS=0V
-30
V
IDSS
VDS=-24V, VGS=0V
-1 uA
IGSS
VDS=0V, VGS=±25V
±100 nA
VGS(th) VDS=VGS ID=-250μA (Note.1)
-0.8
-2.5 V
VGS=-10V, ID=-1.3A (Note.1)
180
RDS(On) VGS=-4.5V, ID=-1.1A (Note.1)
300 mΩ
VGS=-4.5V, ID=-1.1A,TJ=125℃ (Note.1)
400
gFS
VDS=-5V, ID=-0.9A
2
S
Ciss
150
Coss
VGS=0V, VDS=-15V, f=1MHz
40
pF
Crss
20
Qg
Qgs
VGS=-4.5V, VDS=-10V, ID=-0.9A
(Note.1)
Qgd
1.4 1.9
0.5
nC
0.5
td(on)
8
tr
td(off)
VGS=-10V, VDS=-10V, ID=-1A,RG=6Ω
(Note.1)
28
18 ns
tf
2
trr
IF=-3.9A, dI/dt=100A/μs
Qrr
17
7
nC
IS
-0.42 A
VSD
IS=-0.42A,VGS=0V (Note.1)
-1.2 V
Note.1:Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%
■ Marking
Marking
52AP F
2 www.kexin.com.cn
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