PTF081301E View Datasheet(PDF) - Infineon Technologies

Part Name

Description

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PTF081301E

Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz

Infineon Technologies 

PTF081301E

PTF081301F

Package Outline Specifications

Package 30248

(45° X 2.72

[.107])

CL

9.78

[.385]

19.43 ±0.51

[.765±.020]

LID 9.40 +-00..1150

[.370+-..000046 ]

CL

1.02

[.040]

0.0381 [.0015] -A-

D

G

2X 12.70

[.500]

27.94

[1.100]

19.81±0.20

[.780±.008]

34.04

[1.340]

2X 4.83±0.51

[.190±.020]

S

2X R1.63

[.064]

4X R1.52

[.060]

SPH 1.57

[.062]

3.61±0.38

[.142±.015]

248-cases_30

Diagram Notes:

1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].

2. All tolerances ± 0.127 [.005] unless specified otherwise.

3. Pins: D = drain, S = source, G = gate.

4. Interpret dimensions and tolerances per ASME Y14.5M-1994.

5. Primary dimensions are mm. Alternate dimensions are inches.

6. Gold plating thickness:

S - flange: 2.54 micron (min) [100 microinch (min)]

D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]

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http://www.infineon.com/products

Data Sheet

9 of 11

Rev. 03, 2005-05-02

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