datasheetbank_Logo     Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

PTF081301E View Datasheet(PDF) - Infineon Technologies

Part NameDescriptionManufacturer
PTF081301E Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 ? 960 MHz Infineon
Infineon Technologies Infineon
PTF081301E Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
PTF081301E
PTF081301F
Package Outline Specifications
Package 30248
(45° X 2.72
[.107])
CL
9.78
[.385]
19.43 ±0.51
[.765±.020]
LID 9.40 +-00..1150
[.370+-..000046 ]
CL
1.02
[.040]
0.0381 [.0015] -A-
D
G
2X 12.70
[.500]
27.94
[1.100]
19.81±0.20
[.780±.008]
34.04
[1.340]
2X 4.83±0.51
[.190±.020]
S
2X R1.63
[.064]
4X R1.52
[.060]
SPH 1.57
[.062]
3.61±0.38
[.142±.015]
248-cases_30
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron (min) [100 microinch (min)]
D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet
9 of 11
Rev. 03, 2005-05-02
Direct download click here

 

Share Link : 

All Rights Reserved © datasheetbank.com 2014 - 2020 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]