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PTF081301E View Datasheet(PDF) - Infineon Technologies

Part NameDescriptionManufacturer
PTF081301E Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 ? 960 MHz Infineon
Infineon Technologies Infineon
PTF081301E Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
PTF081301E
PTF081301F
Reference Circuit
V DD
C24
0.001µF
QQ1
LM7805
C26
0. 001µF
R7
3.3KV
R1.32KV
R4
1. 3KV
Q1
BCP56
R5
10KV
C25
0.001µF
R6
22KV
+C101µF
35V
1R01V
C2
0.1µF
50V
5R.21KV
C3
33pF
l4
DUT
RF_IN
l1
l2
C4
33pF
l3
C5
5.0pF
l5
C6
0.5pF
C7
C8
33pF
1µF
L1
V DD
C9
1µF
+1C01µ0F
50V
C11
0.1µF
50V
+1C01µ2F
50V
l7
l6
l8
C6.183pF
C17
33pF
l9
l10 l11
l12
C6.184pF
C0.155pF
C16
0.3pF
L2
RF_OUT
C18
33pF
C19
1µF
C20
1µF
+C102µ1F
50V
C02.12µF
50V
+
C23
10µF
50V
081301_sch
Reference Circuit Schematic for 960 MHz
Circuit Assembly Information
DUT
PCB
PTF081301E or PTF081301F
ε 0.76 mm [.030"] thick, r = 4.5
LDMOS Transistor
2 oz. copper
Microstrip
Electrical Characteristics at 960 MHz1
l1
l2
l3
l4
l5
l6
l7, l8
l9
l10
l11
l12
0.075 λ, 50.0
0.101 λ, 50.0
0.055 λ, 50.0
0.289 λ, 74.0
0.061 λ, 7.5
0.036 λ, 7.9
0.132 λ, 50.0
0.114 λ, 7.9
0.047 λ, 7.9
0.134 λ, 38.0
0.029 λ, 50.0
1Electrical characteristics rounded
Dimensions: L x W (mm)
12.70 x 1.35
17.27 x 1.35
9.40 x 1.35
50.80 x 0.64
9.27 x 16.26
5.46 x 15.24
22.61 x 1.27
17.40 x 15.24
7.24 x 15.24
22.35 x 2.16
4.95 x 1.37
Rogers TMM4
Dimensions: L x W (in.)
0.500 x 0.053
0.680 x 0.053
0.370 x 0.053
2.000 x 0.025
0.365 x 0.640
0.215 x 0.600
0.890 x 0.050
0.685 x 0.600
0.285 x 0.600
0.880 x 0.085
0.195 x 0.054
Data Sheet
7 of 11
Rev. 03, 2005-05-02
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