datasheetbank_Logo     Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

PTF081301E View Datasheet(PDF) - Infineon Technologies

Part NameDescriptionManufacturer
PTF081301E Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 ? 960 MHz Infineon
Infineon Technologies Infineon
PTF081301E Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Typical Performance (cont.)
Three-Carrier CDMA 2000 Performance
VDD = 28 V, IDQ = 950 mA, f = 960 MHz
TCASE = 25°C
45 TCASE = 90°C
-20
Ef f icienc y
-30
30 ACP fC – 1.98 MHz
-40
ALT f C – 3.21 MHz
-50
15
-60
-70
ALT f C + 5.23 MHz
0
-80
30 32 34 36 38 40 42 44 46 48 50
Output Power (dBm), Avg.
PTF081301E
PTF081301F
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
VDD = 28 V, IDQ = 950 mA, f1 = 959 MHz, f2 = 960 MHz
-20
3rd Order
-30
-40
5th
-50
-60
7th
-70
-80
37 39 41 43 45 47 49
Output Power (dBm), PEP
Gate-Source Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current.
1.03
0.8 A
1.02
3.0 A
1.01
5.2 A
7.6 A
1.00
9.9 A
0.99
12.0 A
0.98
0.97
0.96
0.95
-20 0
20 40 60 80 100
Case Temperature (ºC)
Data Sheet
5 of 11
Rev. 03, 2005-05-02
Direct download click here

 

Share Link : 

All Rights Reserved © datasheetbank.com 2014 - 2020 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]