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PTF081301E View Datasheet(PDF) - Infineon Technologies

Part NameDescriptionManufacturer
PTF081301E Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 ? 960 MHz Infineon
Infineon Technologies Infineon
PTF081301E Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
PTF081301E
PTF081301F
Package Outline Specifications (cont.)
Package 31248
( 45° X 2.72
[.107])
CL
4.83±0.51
[.190±.020]
D
LID 9.40+-00..1150
9.78
[.370+-..000064 ]
[.385]
19.43±0.51
CL [.765±.020]
G
2X 12.70
[.500]
SPH 1.57
[.062]
19.81±0.20
[.780±.008]
1.02
[.040]
0.0381 [.0015] -A-
3.61±0.38
[.142±.015]
S
20.57
[.810]
248-cases_31248
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron (min) [100 microinch (min)]
D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet
10 of 11
Rev. 03, 2005-05-02
Direct download click here

 

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