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F10GZ47 View Datasheet(PDF) - Toshiba

Part Name
Description
View to exact match
F10GZ47 Datasheet PDF : 6 Pages
1 2 3 4 5 6
SF10GZ47,SF10JZ47
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF10GZ47,SF10JZ47
MEDIUM POWER CONTROL APPLICATIONS
l Repetitive Peak OffState Voltage : VDRM = 400,600V
Repetitive Peak Reverse Voltage : VRRM = 400,600V
l Average OnState Current
: IT (AV) = 10A
l Isolation Voltage
: VIsol = 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
OffState Voltage
and Repetitive Peak
Reverse Voltage
SF10GZ47
SF10JZ47
NonRepetitive Peak
Reverse Voltage
(NonRepetitive<5ms,
Tj = 0~125°C)
SF10GZ47
SF10JZ47
Average OnState Current
(Half Sine Waveform Tc = 66°C)
R.M.S. OnState Current
Peak One Cycle Surge On-State
Current (NonRepetitive)
I2t Limit Value
Critical Rate of Rise of On-State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
Note 1: di / dt test condition
VDRM = 0.5 × Rated
ITM 30A
tgw 10µs
tgr 250ns
igp = IGT × 2.0
SYMBOL
VDRM
VRRM
VRSM
IT (AV)
IT (RMS)
ITSM
I2t
di / dt
PGM
PG (AV)
VFGM
VRGM
IGM
Tj
Tstg
VIsol
RATING
400
600
500
720
10
16
160 (50Hz)
176 (60Hz)
125
100
5
0.5
10
5
2
40~125
40~125
1500
UNIT
V
V
A
A
A
A2s
A / µs
W
W
V
V
A
°C
°C
V
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 1.7 g
1310H1B
1
2001-07-13
 

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