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BUZ11A View Datasheet(PDF) - Siemens AG

Part NameDescriptionManufacturer
BUZ11A SIPMOS ® Power Transistor Siemens
Siemens AG Siemens
BUZ11A Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BUZ 11 A
Not for new design
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current IS
TC = 25 °C
-
Inverse diode direct current,pulsed
ISM
TC = 25 °C
-
Inverse diode forward voltage
VSD
VGS = 0 V, IF = 60 A
-
Reverse recovery time
trr
VR = 30 V, IF=lS, diF/dt = 100 A/µs
-
Reverse recovery charge
Qrr
VR = 30 V, IF=lS, diF/dt = 100 A/µs
-
A
-
26
-
104
V
1.6
1.8
ns
80
-
µC
0.1
-
Semiconductor Group
4
07/96
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