SPI20N65C3 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
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| SPI20N65C3 Datasheet PDF : 0 Pages | |||
SPP20N65C3, SPA20N65C3
SPI20N65C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
PG-TO262
V DS
RDS(on)
ID
650 V
0.19 Ω
20.7 A
PG-TO220FP PG-TO220
3
12
P-TO220-3-31
Type
SPP20N65C3
SPA20N65C3
SPI20N65C3
Package
PG-TO220
PG-TO220FP
PG-TO262
Ordering Code
Q67040-S4556
SP000216362
Q67040-S4560
Marking
20N65C3
20N65C3
20N65C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=3.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=7A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
Unit
SPP_I SPA
20.7
13.1
A
20.71)
13.11)
62.1
62.1 A
690
690 mJ
1
1
7
7
A
±20
±20 V
±30
±30
208
34.5 W
-55...+150
°C
Rev. 3.1
Page 1
2009-12-01
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