datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

3N150 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
3N150 Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STFW3N150, STP3N150, STW3N150
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220,TO-247
TO-3PF
VDS
VGS
ID
ID
IDM (1)
PTOT
VISO
Drain-source voltage (VGS = 0)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;TC=25 °C)
Derating factor
Tstg Storage temperature
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area
1500
± 30
2.5
1.6
10
140
2.5(1)
1.6 (1)
10 (1)
63
3500
1.12
0.5
-50 to 150
150
Unit
V
V
A
A
A
W
V
W/°C
°C
°C
Table 3.
Symbol
Thermal data
Parameter
Rthj-case
Rthj-amb
Thermal resistance junction-case max
Thermal resistance junction-ambient
max
Tj
Maximum lead temperature for
soldering purpose
TO-220 TO-247
0.89
62.5
50
300
TO-3PF
2
50
Unit
°C/W
°C/W
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
IAR
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max value
Unit
2.5
A
450
mJ
Doc ID 13102 Rev 9
3/15
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]